Power MOSFET technology switching behavior in motor control applications
ST’s STripFET™ F7 series of low-voltage MOSFETs, ranging from 40 to 120 V, features an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching.
Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, motor control and automotive applications. Power MOSFETs are belonging to the STPOWER™ family.
Features and benefits:
Compared to the previous STripFET F4 and F3 series, the latest F7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.
Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, motor control and automotive applications. Power MOSFETs are belonging to the STPOWER™ family.
Features and benefits:
- Among lowest RDS(on) in the market
- Minimal RDS(on) x Qg for increased system efficiency and more compact designs
- Optimized Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Compared to the previous STripFET F4 and F3 series, the latest F7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.
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